중국 제조 업체 SiC는 흑연 MOCVD Epitaxy Susceptor를 입혔습니다

Purity < 5ppm
‣ Good doping uniformity
‣ High density and adhesion
‣ Good anti-corrosive and carbon resistence

‣ Professional customization
‣ Short lead time
‣ Stable supply
‣ Quality control and continual improvement

Epitaxy of GaN on Sapphire (RGB/Mini/Micro LED);
Epitaxy of GaN on Si Substrate(UVC);
Epitaxy of GaN on Si Substrate(Electronical Device);
Epitaxy of Si on Si Substrate(Integrated circuit);
Epitaxy of SiC on SiC Substrate (Substrate);
Epitaxy of InP on InP

High quality MOCVD Susceptor Buy online in China

A wafer needs to pass through several steps before it is ready for use in electronic devices. One important process is silicon epitaxy, in which the wafers are carried on graphite susceptors. The properties and quality of the susceptors have a crucial effect on the quality of the wafer’s epitaxial layer.

For thin film deposition phases such as epitaxy or MOCVD, VET supplies ultra-pure graphiteequipment used to support substrates or “wafers”. At the core of the process, this equipment, epitaxy susceptors or satellite platforms for the MOCVD, are first subjected to the deposition environment:

High temperature.
High vacuum.
Use of aggressive gaseous precursors.
Zero contamination, absence of peeling.
Resistance to strong acids during cleaning operations

VET Energy is the real manufacturer of customized graphite and silicon carbide products with coating for semiconductor and photovoltaic industry. Our technical team comes from top domestic research institutions, can provide more professional material solutions for you.

우리는 지속적으로 고급 재료를 제공하기 위해 고급 프로세스를 개발하고, 코팅과 기판 꽉 끼고 더 적은 prone과 detachment에 결합 할 수있는 독점적 인 특허 기술에서 일했습니다.

우리의 제품의 특징:

1. 명세 1700°C까지 고열 산화 저항.
2. 명세 높은 순수성 및 열 균등성
3. 명세 우수한 내식성: 산, 알칼리, 소금 및 유기 시약.
4. 명세 높은 경도, 소형 표면, 정밀한 입자.
5. 명세 더 긴 서비스 기간 및 더 튼튼한

· CVD (주)·薄膜基本物理性能 CVD SiC의 기본 물리적 특성 제품정보
/ 재산	/ 일반 값
COIN体结构 / 크리스탈 구조	FCC β 단계 多PSK,,(111) 덧셈
☸ / 밀도	3.21의 g/cm3
/ 경도	2500 2500 (500g 짐)
大大小 / 곡물 SiZe	2~10μm의
/화학 순수성	99.99995%
/ 열용량	640 J·kg^-1·K^-1
/ 승화 온도	파장: 2700nm
/ 굽힘 강도	415 MPa RT 4 점
s / 영의 조수	430 Gpa 4pt 굴곡, 1300°C
/ 열전도	300W·m^-1·K^-1
/ 열팽창(CTE)	크기: 4.5×10^-6·^-1